PMDT290UCE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N/P-CH 20V SOT666
$0.44
Available to order
Reference Price (USD)
4,000+
$0.12415
8,000+
$0.11662
12,000+
$0.10910
28,000+
$0.10007
100,000+
$0.09576
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the PMDT290UCE,115 from Nexperia USA Inc. for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the PMDT290UCE,115 stands out for its reliability and efficiency. Nexperia USA Inc.'s advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Not For New Designs
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 800mA, 550mA
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 500mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Vishay Siliconix
SI4946BEY-T1-GE3
Diodes Incorporated
ZXMN3AM832TA
Micro Commercial Co
SI3134KDW-TP
Nexperia USA Inc.
BUK9K17-60EX
Vishay Siliconix
SQJ204EP-T1_GE3
Fairchild Semiconductor
FDMS3616S
Toshiba Semiconductor and Storage
SSM6L36TU,LF
Panjit International Inc.
PJL9606_R2_00001
Diodes Incorporated
ZXMHC3A01N8TC
Harris Corporation