PMG85XP,115
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA PMG85XP - SMALL SIG
$0.05
Available to order
Reference Price (USD)
3,000+
$0.08800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMG85XP,115 from NXP USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMG85XP,115 offers the precision and reliability you need. Trust NXP USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 115mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.15V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 375mW (Ta), 2.4W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-TSSOP
- Package / Case: 6-TSSOP, SC-88, SOT-363
Related Products
Vishay Siliconix
SI6423DQ-T1-BE3
onsemi
FDMS7682
Vishay Siliconix
SQ2319ADS-T1_GE3
Fairchild Semiconductor
FQI16N25CTU
onsemi
FDFMA2N028Z
Micro Commercial Co
BSS84KW-TP
Taiwan Semiconductor Corporation
TSM35N10CP ROG
Infineon Technologies
IPS70R1K4CEAKMA1
Fairchild Semiconductor
HUF76121S3S
STMicroelectronics