PMGD290UCEAX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N/P-CH 20V 6TSSOP
$0.44
Available to order
Reference Price (USD)
3,000+
$0.11798
6,000+
$0.11083
15,000+
$0.10368
30,000+
$0.09510
75,000+
$0.09152
Exquisite packaging
Discount
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Discover the high-performance PMGD290UCEAX from Nexperia USA Inc., a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the PMGD290UCEAX delivers unmatched performance. Trust Nexperia USA Inc.'s cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 725mA, 500mA
- Rds On (Max) @ Id, Vgs: 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 83pF @ 10V
- Power - Max: 280mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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