PMGD370XN,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET 2N-CH 30V 0.74A 6TSSOP
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The PMGD370XN,115 by Nexperia USA Inc. is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the PMGD370XN,115 provides reliable operation under stringent conditions. Nexperia USA Inc.'s innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 740mA
- Rds On (Max) @ Id, Vgs: 440mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.65nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 37pF @ 25V
- Power - Max: 410mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
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