PMH260UNEH
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.2A DFN0606-3
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
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Enhance your electronic projects with the PMH260UNEH single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PMH260UNEH for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 310mOhm @ 700mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN0606-3 (SOT8001)
- Package / Case: 3-XFDFN
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