PMN23UN,135
NXP USA Inc.
NXP USA Inc.
MOSFET N-CH 20V 6.3A 6TSOP
$0.12
Available to order
Reference Price (USD)
1+
$0.12000
500+
$0.1188
1000+
$0.1176
1500+
$0.1164
2000+
$0.1152
2500+
$0.114
Exquisite packaging
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Upgrade your designs with the PMN23UN,135 by NXP USA Inc., a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the PMN23UN,135 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-74
- Package / Case: SC-74, SOT-457
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