PMPB10XNE,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 9A DFN2020MD-6
$0.18
Available to order
Reference Price (USD)
3,000+
$0.21212
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMPB10XNE,115 from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMPB10XNE,115 offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN2020MD-6
- Package / Case: 6-UDFN Exposed Pad
Related Products
onsemi
FQPF16N25C
Vishay Siliconix
IRFZ44RPBF-BE3
Diodes Incorporated
DMN1014UFDF-13
onsemi
FDP047AN08A0-F102
onsemi
NTMS4N01R2G
STMicroelectronics
STP3NK80Z
Toshiba Semiconductor and Storage
TPH2R104PL,LQ
Rectron USA
RM80N20DN
onsemi
NTHL095N65S3HF
STMicroelectronics