PMV130ENEAR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 2.1A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.10704
6,000+
$0.10176
15,000+
$0.09384
30,000+
$0.08856
75,000+
$0.08064
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV130ENEAR from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMV130ENEAR for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 460mW (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
HUFA75321D3
IXYS
IXFK32N80P
Nexperia USA Inc.
PMPB13XNE,115
Vishay Siliconix
IRFRC20TRLPBF
Infineon Technologies
BSP125H6433XTMA1
onsemi
NDF05N50ZG
IXYS
IXFH26N60P
Harris Corporation
IRF351
Fairchild Semiconductor
ISL9N308AS3ST
Micro Commercial Co