PMV213SN,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 100V 1.9A TO236AB
$0.63
Available to order
Reference Price (USD)
3,000+
$0.24047
6,000+
$0.22694
15,000+
$0.21341
30,000+
$0.20393
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV213SN,215 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMV213SN,215 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 280mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
SCT3105KLHRC11
Vishay Siliconix
IRF730APBF
onsemi
FDN5618P
Renesas Electronics America Inc
UPA653TT-E1-A
Infineon Technologies
IPW60R045CPAFKSA1
Goford Semiconductor
GT650N15K
Infineon Technologies
IPA60R190C6XKSA1
IXYS
IXFK98N50P3
onsemi
FDD4N60NZ
Toshiba Semiconductor and Storage