PMV240SPR
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 100V 1.2A TO236AB
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The PMV240SPR from Nexperia USA Inc. redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the PMV240SPR offers the precision and reliability you need. Trust Nexperia USA Inc. to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 365mOhm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 710mW (Ta), 8.3W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Fairchild Semiconductor
FDU068AN03L
Panjit International Inc.
PJQ5445_R2_00001
Infineon Technologies
BSZ100N03LSGATMA1
Infineon Technologies
SPD50N03S2-07G
STMicroelectronics
STP60N043DM9
Infineon Technologies
IPI50R350CPXKSA1
Infineon Technologies
IRLR2705TRLPBF
onsemi
FCB070N65S3
Vishay Siliconix
IRFD9020PBF
Nexperia USA Inc.