PMV45EN2R
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 30V 4.1A TO236AB
$0.47
Available to order
Reference Price (USD)
3,000+
$0.11574
6,000+
$0.11003
15,000+
$0.10146
30,000+
$0.09576
75,000+
$0.08719
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the PMV45EN2R from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMV45EN2R ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 42mOhm @ 4.1A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 510mW (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRF3205LPBF
Vishay Siliconix
IRLR024TRPBF
Vishay Siliconix
SI1013X-T1-GE3
Infineon Technologies
BSS670S2LH6327XTSA1
IXYS
IXFK120N30P3
Micro Commercial Co
SI2306-TP
STMicroelectronics
STL11N4LLF5
Rohm Semiconductor
RCX510N25
onsemi
NTMS3P03R2G
STMicroelectronics