PMZ350UPEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 1A DFN1006-3
$0.47
Available to order
Reference Price (USD)
10,000+
$0.11632
30,000+
$0.10978
50,000+
$0.09996
100,000+
$0.09865
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the PMZ350UPEYL by Nexperia USA Inc., a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The PMZ350UPEYL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Nexperia USA Inc..
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-883
- Package / Case: SC-101, SOT-883
Related Products
STMicroelectronics
STD5N52K3
Vishay Siliconix
SQS401EN-T1_BE3
STMicroelectronics
STW30NM50N
onsemi
FDB8447L
Taiwan Semiconductor Corporation
TSM4NB65CP ROG
Diodes Incorporated
ZXMP6A17E6TA
Alpha & Omega Semiconductor Inc.
AOT190A60CL
Infineon Technologies
BTS247Z
Microchip Technology
APT5010JLLU3
STMicroelectronics