PMZB320UPEYL
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 30V 1A DFN1006B-3
$0.52
Available to order
Reference Price (USD)
10,000+
$0.08014
30,000+
$0.07497
50,000+
$0.06721
100,000+
$0.06618
Exquisite packaging
Discount
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Discover the PMZB320UPEYL from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PMZB320UPEYL ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 510mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 122 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 6.25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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