PMZB350UPE,315
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 20V 1A DFN1006B-3
$0.52
Available to order
Reference Price (USD)
10,000+
$0.13192
30,000+
$0.12248
50,000+
$0.11855
Exquisite packaging
Discount
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The PMZB350UPE,315 from Nexperia USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Nexperia USA Inc.'s PMZB350UPE,315 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 127 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 3.125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: 3-XFDFN
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