PSMN2R6-60PSQ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 150A TO220AB
$3.83
Available to order
Reference Price (USD)
1+
$3.00000
50+
$2.42120
100+
$2.17900
500+
$1.69478
1,000+
$1.40424
Exquisite packaging
Discount
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The PSMN2R6-60PSQ by Nexperia USA Inc. is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the PSMN2R6-60PSQ is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 326W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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Nexperia USA Inc.