PSMN2R8-40YSDX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 160A LFPAK56
$1.70
Available to order
Reference Price (USD)
1+
$1.70000
500+
$1.683
1000+
$1.666
1500+
$1.649
2000+
$1.632
2500+
$1.615
Exquisite packaging
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Discover the PSMN2R8-40YSDX from Nexperia USA Inc., a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the PSMN2R8-40YSDX ensures reliable performance in demanding environments. Upgrade your circuit designs with Nexperia USA Inc.'s cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 160A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 147W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
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