PSMN7R0-60YS,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 89A LFPAK56
$1.64
Available to order
Reference Price (USD)
1,500+
$0.46200
3,000+
$0.43120
7,500+
$0.40964
10,500+
$0.39424
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the PSMN7R0-60YS,115 single MOSFET from Nexperia USA Inc.. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Nexperia USA Inc.'s PSMN7R0-60YS,115 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 117W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56, Power-SO8
- Package / Case: SC-100, SOT-669
Related Products
onsemi
NTMJS1D4N06CLTWG
Fairchild Semiconductor
FDPF7N50
onsemi
NTD23N03RT4G
Diodes Incorporated
DMN2710UTQ-7
Infineon Technologies
IRLR7843TRPBF
Alpha & Omega Semiconductor Inc.
AOD4185
onsemi
NTS4409NT1G
Renesas Electronics America Inc
NP83P04PDG-E1-AY
Renesas Electronics America Inc
UPA1810GR-9JG-E2-A
Vishay Siliconix