QH8M22TCR
Rohm Semiconductor
Rohm Semiconductor
QH8M22 IS THE HIGH RELIABILITY T
$1.34
Available to order
Reference Price (USD)
1+
$1.34000
500+
$1.3266
1000+
$1.3132
1500+
$1.2998
2000+
$1.2864
2500+
$1.273
Exquisite packaging
Discount
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The QH8M22TCR from Rohm Semiconductor is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the QH8M22TCR provides reliable performance in demanding environments. Choose Rohm Semiconductor for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 10µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 10V, 9.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 193pF @ 20V, 450pF @ 20V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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