QS8M31TR
Rohm Semiconductor
Rohm Semiconductor
QS8M31 IS COMPLEX TYPE MOSFET(P+
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
Exquisite packaging
Discount
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Discover the high-performance QS8M31TR from Rohm Semiconductor, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the QS8M31TR delivers unmatched performance. Trust Rohm Semiconductor's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 2A (Ta)
- Rds On (Max) @ Id, Vgs: 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 4nC @ 5V, 7.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 10V, 750pF @ 10V
- Power - Max: 1.1W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: TSMT8
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