R6020JNXC7G
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 20A TO220FM
$6.17
Available to order
Reference Price (USD)
1+
$6.17000
500+
$6.1083
1000+
$6.0466
1500+
$5.9849
2000+
$5.9232
2500+
$5.8615
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The R6020JNXC7G from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R6020JNXC7G offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 234mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 7V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 76W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Fairchild Semiconductor
FQB19N10LTM
Infineon Technologies
IRFH5025TRPBF
onsemi
NDP7060
UnitedSiC
UF3SC120009K4S
IXYS
IXTP1N100P
Fairchild Semiconductor
FDP10AN06A0
Toshiba Semiconductor and Storage
TK155A65Z,S4X
Sanken
EKI07174
Diodes Incorporated
DMN2310U-7
Infineon Technologies