R6025JNZ4C13
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 25A TO247G
$9.96
Available to order
Reference Price (USD)
1+
$9.96000
500+
$9.8604
1000+
$9.7608
1500+
$9.6612
2000+
$9.5616
2500+
$9.462
Exquisite packaging
Discount
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The R6025JNZ4C13 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's R6025JNZ4C13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 182mOhm @ 12.5A, 15V
- Vgs(th) (Max) @ Id: 7V @ 4.5mA
- Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 306W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247G
- Package / Case: TO-247-3
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