R6035VNXC7G
Rohm Semiconductor

Rohm Semiconductor
600V 17A TO-220FM, PRESTOMOS WIT
$6.09
Available to order
Reference Price (USD)
1+
$6.09000
500+
$6.0291
1000+
$5.9682
1500+
$5.9073
2000+
$5.8464
2500+
$5.7855
Exquisite packaging
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Enhance your electronic projects with the R6035VNXC7G single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's R6035VNXC7G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 114mOhm @ 8A, 15V
- Vgs(th) (Max) @ Id: 6.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 81W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack