R6507ENXC7G
Rohm Semiconductor
Rohm Semiconductor
650V 7A TO-220FM, LOW-NOISE POWE
$3.08
Available to order
Reference Price (USD)
1+
$3.08000
500+
$3.0492
1000+
$3.0184
1500+
$2.9876
2000+
$2.9568
2500+
$2.926
Exquisite packaging
Discount
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Optimize your power electronics with the R6507ENXC7G single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the R6507ENXC7G combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 665mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 46W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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