Shopping cart

Subtotal: $0.00

R6511ENJTL

Rohm Semiconductor
R6511ENJTL Preview
Rohm Semiconductor
MOSFET N-CH 650V 11A LPTS
$4.25
Available to order
Reference Price (USD)
1+
$4.25000
500+
$4.2075
1000+
$4.165
1500+
$4.1225
2000+
$4.08
2500+
$4.0375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 400mOhm @ 3.8A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 320µA
  • Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 124W (Tc)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LPTS
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Products

Panjit International Inc.

PJQ4476AP_R2_00001

Toshiba Semiconductor and Storage

TK200F04N1L,LXGQ

Vishay Siliconix

SIHJ10N60E-T1-GE3

Infineon Technologies

BSZ0901NSATMA1

Rohm Semiconductor

RJK005N03T146

Toshiba Semiconductor and Storage

SSM3J130TU,LF

Nexperia USA Inc.

BUK7M12-60EX

Microchip Technology

APT31M100B2

Top