R8006KND3TL1
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 6A
$3.63
Available to order
Reference Price (USD)
1+
$3.63000
500+
$3.5937
1000+
$3.5574
1500+
$3.5211
2000+
$3.4848
2500+
$3.4485
Exquisite packaging
Discount
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The R8006KND3TL1 from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the R8006KND3TL1 offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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