RGS30TSX2DGC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$7.71
Available to order
Reference Price (USD)
1+
$7.71000
500+
$7.6329
1000+
$7.5558
1500+
$7.4787
2000+
$7.4016
2500+
$7.3245
Exquisite packaging
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The RGS30TSX2DGC11 by Rohm Semiconductor is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Rohm Semiconductor's reputation for quality, the RGS30TSX2DGC11 is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 267 W
- Switching Energy: 740µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 41 nC
- Td (on/off) @ 25°C: 30ns/70ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 157 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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