RGS30TSX2DHRC11
Rohm Semiconductor
Rohm Semiconductor
10US SHORT-CIRCUIT TOLERANCE, 12
$8.42
Available to order
Reference Price (USD)
1+
$8.42000
500+
$8.3358
1000+
$8.2516
1500+
$8.1674
2000+
$8.0832
2500+
$7.999
Exquisite packaging
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The RGS30TSX2DHRC11 Single IGBT transistor by Rohm Semiconductor is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RGS30TSX2DHRC11 provides consistent performance in varied conditions. Rely on Rohm Semiconductor's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 30 A
- Current - Collector Pulsed (Icm): 45 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
- Power - Max: 267 W
- Switching Energy: 740µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 41 nC
- Td (on/off) @ 25°C: 30ns/70ns
- Test Condition: 600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr): 157 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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