RGS60TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT.
$7.27
Available to order
Reference Price (USD)
1+
$7.27000
500+
$7.1973
1000+
$7.1246
1500+
$7.0519
2000+
$6.9792
2500+
$6.9065
Exquisite packaging
Discount
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The RGS60TS65DHRC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGS60TS65DHRC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGS60TS65DHRC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 56 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 223 W
- Switching Energy: 660µJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 36 nC
- Td (on/off) @ 25°C: 28ns/104ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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