RGS80TSX2HRC11
Rohm Semiconductor
Rohm Semiconductor
1200V 40A FIELD STOP TRENCH IGBT
$11.61
Available to order
Reference Price (USD)
1+
$11.61000
500+
$11.4939
1000+
$11.3778
1500+
$11.2617
2000+
$11.1456
2500+
$11.0295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGS80TSX2HRC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGS80TSX2HRC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
Infineon Technologies
SGP20N60HSXKSA1
STMicroelectronics
STGW50HF60SD
IXYS
IXGH10N170
Rohm Semiconductor
RGT50TS65DGC13
IXYS
IXGT10N170A
IXYS
IXGT6N170
STMicroelectronics
STGP10NB60S
Diodes Incorporated
DGTD65T60S2PT
STMicroelectronics
STGB10NB37LZT4
STMicroelectronics