RGSX5TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
8S SHORT-CIRCUIT TOLERANCE, 650V
$10.91
Available to order
Reference Price (USD)
1+
$10.91000
500+
$10.8009
1000+
$10.6918
1500+
$10.5827
2000+
$10.4736
2500+
$10.3645
Exquisite packaging
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The RGSX5TS65DHRC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGSX5TS65DHRC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGSX5TS65DHRC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 114 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
- Power - Max: 404 W
- Switching Energy: 3.32mJ (on), 1.9mJ (off)
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 43ns/113ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 114 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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