RGTH60TS65GC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 58A 197W TO-247N
$3.72
Available to order
Reference Price (USD)
1+
$2.93000
10+
$2.62800
30+
$2.48400
120+
$2.15283
270+
$2.04241
510+
$1.83265
1,020+
$1.54560
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your power management systems with the RGTH60TS65GC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGTH60TS65GC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGTH60TS65GC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 58 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 197 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 27ns/105ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
Fairchild Semiconductor
SGW23N60UFDTM
Fairchild Semiconductor
FGPF7N60LSDTU
IXYS
IXYH50N65C3
Infineon Technologies
IGW15T120FKSA1
Rohm Semiconductor
RGCL60TS60GC13
onsemi
ISL9V2040D3ST
STMicroelectronics
STGD7NB60KT4
onsemi
FGH25T120SMD-F155
IXYS
IXGA48N60C3-TRL
STMicroelectronics