SGW23N60UFDTM
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.83
Available to order
Reference Price (USD)
1+
$0.83000
500+
$0.8217
1000+
$0.8134
1500+
$0.8051
2000+
$0.7968
2500+
$0.7885
Exquisite packaging
Discount
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The SGW23N60UFDTM Single IGBT transistor by Fairchild Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The SGW23N60UFDTM ensures precise power control and long-term stability. With Fairchild Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate SGW23N60UFDTM into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 23 A
- Current - Collector Pulsed (Icm): 92 A
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
- Power - Max: 100 W
- Switching Energy: 115µJ (on), 135µJ (off)
- Input Type: Standard
- Gate Charge: 49 nC
- Td (on/off) @ 25°C: 17ns/60ns
- Test Condition: 300V, 12A, 23Ohm, 15V
- Reverse Recovery Time (trr): 60 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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