STGWT20V60DF
STMicroelectronics
STMicroelectronics
IGBT 600V 40A 167W TO3P-3
$3.13
Available to order
Reference Price (USD)
1+
$3.31000
30+
$2.80667
120+
$2.43242
510+
$2.07069
1,020+
$1.74636
2,520+
$1.66320
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The STGWT20V60DF Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGWT20V60DF ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGWT20V60DF into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 80 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
- Power - Max: 167 W
- Switching Energy: 200µJ (on), 130µJ (off)
- Input Type: Standard
- Gate Charge: 116 nC
- Td (on/off) @ 25°C: 38ns/149ns
- Test Condition: 400V, 20A, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
IXYS
IXYN30N170CV1
Microchip Technology
APT50GR120L
IXYS
IXYH100N65C3
Fairchild Semiconductor
SGL40N150DTU
Harris Corporation
IGTP10N40
Infineon Technologies
IRGS4610DPBF
Harris Corporation
HGT1S12N60C3
Fairchild Semiconductor
FGB3236-F085
onsemi
FGY75T95LQDT
Microchip Technology