IXYH100N65C3
IXYS
IXYS
IGBT 650V 200A 830W TO247
$11.35
Available to order
Reference Price (USD)
1+
$8.87000
10+
$7.98500
30+
$7.27533
120+
$6.56567
270+
$6.03330
510+
$5.50094
1,020+
$4.79115
Exquisite packaging
Discount
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Optimize your power systems with the IXYH100N65C3 Single IGBT transistor from IXYS. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the IXYH100N65C3 delivers consistent and reliable operation. Trust IXYS's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 420 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 2.15mJ (on), 840µJ (off)
- Input Type: Standard
- Gate Charge: 164 nC
- Td (on/off) @ 25°C: 28ns/106ns
- Test Condition: 400V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXTH)
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