FGH40T120SMD
onsemi
onsemi
IGBT TRENCH/FS 1200V 80A TO247-3
$9.58
Available to order
Reference Price (USD)
1+
$7.25000
10+
$6.57200
450+
$5.24907
900+
$4.80814
1,350+
$4.22024
Exquisite packaging
Discount
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Optimize your power systems with the FGH40T120SMD Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGH40T120SMD delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 2.7mJ (on), 1.1mJ (off)
- Input Type: Standard
- Gate Charge: 370 nC
- Td (on/off) @ 25°C: 40ns/475ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 65 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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