FGD3440G2-F085
onsemi
onsemi
IGBT 400V 26.9A TO252AA
$2.73
Available to order
Reference Price (USD)
2,500+
$0.82144
5,000+
$0.81130
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the FGD3440G2-F085 Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGD3440G2-F085 delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): 26.9 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
- Power - Max: 166 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 24 nC
- Td (on/off) @ 25°C: -/5.3µs
- Test Condition: 300V, 6.5A, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
Related Products
Microchip Technology
APT20GN60BDQ1G
STMicroelectronics
STGD6NC60HDT4
STMicroelectronics
STGW40H60DLFB
Infineon Technologies
IRGB4610DPBF
Rohm Semiconductor
RGTVX6TS65DGC11
Alpha & Omega Semiconductor Inc.
AOK40B60D
Fairchild Semiconductor
HGT1S7N60A4DS
Infineon Technologies
IGW60T120FKSA1
IXYS
IXXH30N60B3D1
Rohm Semiconductor