IXXH30N60B3D1
IXYS
IXYS
IGBT 600V 60A 270W TO247
$8.83
Available to order
Reference Price (USD)
30+
$5.66100
Exquisite packaging
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Discover the IXXH30N60B3D1 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXXH30N60B3D1 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXXH30N60B3D1 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 115 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 24A
- Power - Max: 270 W
- Switching Energy: 550µJ (on), 500µJ (off)
- Input Type: Standard
- Gate Charge: 39 nC
- Td (on/off) @ 25°C: 23ns/97ns
- Test Condition: 400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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