IXYK100N65B3D1
IXYS
IXYS
IGBT
$13.39
Available to order
Reference Price (USD)
25+
$9.96520
Exquisite packaging
Discount
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Enhance your electronic projects with the IXYK100N65B3D1 Single IGBT transistor from IXYS. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IXYK100N65B3D1 ensures precision and reliability. IXYS's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IXYK100N65B3D1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 225 A
- Current - Collector Pulsed (Icm): 460 A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 1.27mJ (on), 2mJ (off)
- Input Type: Standard
- Gate Charge: 168 nC
- Td (on/off) @ 25°C: 29ns/150ns
- Test Condition: 400V, 50A, 3Ohm, 15V
- Reverse Recovery Time (trr): 37 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264
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