HGTG40N60B3
Harris Corporation
Harris Corporation
70A, 600V, UFS N-CHANNEL IGBT
$10.14
Available to order
Reference Price (USD)
1+
$12.24000
10+
$11.25400
450+
$9.03782
900+
$8.45474
Exquisite packaging
Discount
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Experience top-tier performance with the HGTG40N60B3 Single IGBT transistor from Harris Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGTG40N60B3 ensures energy efficiency and reliability. Trust Harris Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 330 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 290 W
- Switching Energy: 1.05mJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 250 nC
- Td (on/off) @ 25°C: 47ns/170ns
- Test Condition: 480V, 40A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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