ISL9V2040S3ST
Fairchild Semiconductor

Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.17
Available to order
Reference Price (USD)
800+
$1.16020
Exquisite packaging
Discount
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Upgrade your power management systems with the ISL9V2040S3ST Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the ISL9V2040S3ST provides reliable and efficient operation. Fairchild Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose ISL9V2040S3ST for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 430 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 4V, 6A
- Power - Max: 130 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: 12 nC
- Td (on/off) @ 25°C: -/3.64µs
- Test Condition: 300V, 1kOhm, 5V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)