IKW30N65ES5XKSA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH 650V 62A TO247-3
$4.41
Available to order
Reference Price (USD)
1+
$4.82000
10+
$4.36100
240+
$3.62875
720+
$3.13493
1,200+
$2.69219
Exquisite packaging
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The IKW30N65ES5XKSA1 from Infineon Technologies is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose IKW30N65ES5XKSA1 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 560µJ (on), 320µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 17ns/124ns
- Test Condition: 400V, 30A, 13Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
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