RGCL80TK60DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT
$6.01
Available to order
Reference Price (USD)
1+
$6.01000
500+
$5.9499
1000+
$5.8898
1500+
$5.8297
2000+
$5.7696
2500+
$5.7095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power systems with the RGCL80TK60DGC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the RGCL80TK60DGC11 delivers consistent and reliable operation. Trust Rohm Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 35 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
- Power - Max: 57 W
- Switching Energy: 1.11mJ (on), 1.68mJ (off)
- Input Type: Standard
- Gate Charge: 98 nC
- Td (on/off) @ 25°C: 53ns/227ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
Related Products
Infineon Technologies
IGW40N60TPXKSA1
IXYS
IXYK100N65B3D1
STMicroelectronics
STGD3HF60HDT4
Harris Corporation
HGTG40N60B3
Rohm Semiconductor
RGW00TS65DGC11
Fairchild Semiconductor
ISL9V2040S3ST
IXYS
IXBL64N250
Infineon Technologies
IKW30N65ES5XKSA1
Renesas Electronics America Inc
RJH60F0DPK-00#T0
Infineon Technologies