IKB30N65ES5ATMA1
Infineon Technologies
Infineon Technologies
IGBT TRENCH/FS 650V 62A D2PAK
$1.87
Available to order
Reference Price (USD)
1,000+
$2.12959
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKB30N65ES5ATMA1 by Infineon Technologies is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the IKB30N65ES5ATMA1 delivers robust performance. Infineon Technologies's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate IKB30N65ES5ATMA1 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 62 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
- Power - Max: 188 W
- Switching Energy: 560µJ (on), 320µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 17ns/124ns
- Test Condition: 400V, 30A, 13Ohm, 15V
- Reverse Recovery Time (trr): 75 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: PG-TO263-3
Related Products
Infineon Technologies
AUIRGPS4070D0
IXYS
IXGF20N250
onsemi
AFGHL40T65SQ
Harris Corporation
IGTH20N50
onsemi
FGD3440G2-F085
Microchip Technology
APT20GN60BDQ1G
STMicroelectronics
STGD6NC60HDT4
STMicroelectronics
STGW40H60DLFB
Infineon Technologies
IRGB4610DPBF
Rohm Semiconductor