IKY75N120CH3XKSA1
Infineon Technologies
Infineon Technologies
IGBT 1200V 150A TO247-4
$19.07
Available to order
Reference Price (USD)
1+
$18.62000
10+
$17.11200
240+
$14.45225
720+
$12.85629
Exquisite packaging
Discount
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Enhance your electronic projects with the IKY75N120CH3XKSA1 Single IGBT transistor from Infineon Technologies. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the IKY75N120CH3XKSA1 ensures precision and reliability. Infineon Technologies's cutting-edge technology guarantees a component that meets the highest industry standards. Choose IKY75N120CH3XKSA1 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 75A
- Power - Max: 938 W
- Switching Energy: 3.4mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 370 nC
- Td (on/off) @ 25°C: 38ns/303ns
- Test Condition: 600V, 75A, 6Ohm, 15V
- Reverse Recovery Time (trr): 292 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: PG-TO247-4
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