STGWA30H65DFB
STMicroelectronics
STMicroelectronics
IGBT
$2.40
Available to order
Reference Price (USD)
600+
$2.23103
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience top-tier performance with the STGWA30H65DFB Single IGBT transistor from STMicroelectronics. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the STGWA30H65DFB ensures energy efficiency and reliability. Trust STMicroelectronics's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Last Time Buy
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
- Power - Max: 260 W
- Switching Energy: 382µJ (on), 293µJ (off)
- Input Type: Standard
- Gate Charge: 149 nC
- Td (on/off) @ 25°C: 46ns/146ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 140 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 Long Leads
Related Products
Infineon Technologies
IKB30N65ES5ATMA1
Infineon Technologies
AUIRGPS4070D0
IXYS
IXGF20N250
onsemi
AFGHL40T65SQ
Harris Corporation
IGTH20N50
onsemi
FGD3440G2-F085
Microchip Technology
APT20GN60BDQ1G
STMicroelectronics
STGD6NC60HDT4
STMicroelectronics
STGW40H60DLFB
Infineon Technologies