HGT1S12N60C3
Harris Corporation
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT
$1.42
Available to order
Reference Price (USD)
1+
$1.42000
500+
$1.4058
1000+
$1.3916
1500+
$1.3774
2000+
$1.3632
2500+
$1.349
Exquisite packaging
Discount
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Experience top-tier performance with the HGT1S12N60C3 Single IGBT transistor from Harris Corporation. As a key player in Discrete Semiconductor Products, this IGBT offers excellent thermal management and high switching frequency. Perfect for applications like server power supplies, LED lighting, and telecommunications, the HGT1S12N60C3 ensures energy efficiency and reliability. Trust Harris Corporation's expertise to deliver a component that enhances your power electronics with superior functionality.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 24 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
- Power - Max: 104 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 62 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
- Supplier Device Package: I2PAK (TO-262)
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