FGY75T95LQDT
onsemi
onsemi
IGBT 950V 75A
$9.95
Available to order
Reference Price (USD)
1+
$9.95000
500+
$9.8505
1000+
$9.751
1500+
$9.6515
2000+
$9.552
2500+
$9.4525
Exquisite packaging
Discount
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Upgrade your power management systems with the FGY75T95LQDT Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGY75T95LQDT provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGY75T95LQDT for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 950 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 1.69V @ 15V, 75A
- Power - Max: 453 W
- Switching Energy: 2mJ (on), 1.8mJ (off)
- Input Type: Standard
- Gate Charge: 663.3 nC
- Td (on/off) @ 25°C: 52ns/496ns
- Test Condition: 600V, 37.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 259 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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