RGTH80TK65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT
$6.37
Available to order
Reference Price (USD)
1+
$6.37000
500+
$6.3063
1000+
$6.2426
1500+
$6.1789
2000+
$6.1152
2500+
$6.0515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RGTH80TK65DGC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGTH80TK65DGC11 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGTH80TK65DGC11 for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 31 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 66 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 79 nC
- Td (on/off) @ 25°C: 34ns/120ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
Related Products
Fairchild Semiconductor
FGA90N30DTU
Infineon Technologies
IGW60N60H3FKSA1
STMicroelectronics
STGW60V60DF
Infineon Technologies
IGW50N60H3FKSA1
IXYS
IXYX30N170CV1
onsemi
FGD3245G2-F085V
Fairchild Semiconductor
FGH40T65SPD-F085
STMicroelectronics
STGW20V60F
Renesas Electronics America Inc
RJH60D7BDPQ-E0#T2
Renesas Electronics America Inc