RGTV00TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$7.27
Available to order
Reference Price (USD)
1+
$6.36000
10+
$5.71200
25+
$5.40000
100+
$4.68000
450+
$4.44000
900+
$3.98400
1,350+
$3.36000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGTV00TS65DGC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTV00TS65DGC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 95 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 276 W
- Switching Energy: 1.17mJ (on), 940µJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 41ns/142ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 102 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
Infineon Technologies
IHW30N160R5XKSA1
STMicroelectronics
STGD3NB60FT4
Rohm Semiconductor
RGW60TS65GC11
onsemi
SGH20N60RUFDTU
Infineon Technologies
IRGP4640PBF
IXYS
IXGR72N60B3H1
onsemi
NGTB35N60FL2WG
Rohm Semiconductor
RGTV80TS65GC11
Harris Corporation
HGT1S20N35F3VLR4505
IXYS