RGWX5TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$8.56
Available to order
Reference Price (USD)
1+
$8.56000
500+
$8.4744
1000+
$8.3888
1500+
$8.3032
2000+
$8.2176
2500+
$8.132
Exquisite packaging
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The RGWX5TS65DGC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGWX5TS65DGC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 132 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Power - Max: 348 W
- Switching Energy: 2.39mJ (on), 1.68mJ (off)
- Input Type: Standard
- Gate Charge: 213 nC
- Td (on/off) @ 25°C: 64ns/229ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 101 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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